pm200rsd060 Description
Target Applications
FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-formance is improved by 1cm fine rule process.For example, typical VCE(sat)=1.7V
b) Using new Diode which is designed to get soft reverse recovery characteristics.
C) Keeping the package compatibility.
The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM.
●3ρ 150A, 600V Current-sense IGBT for 15kHz switching
●75A, 600V Current-sense regenerative brake IGBT
●Monolithic gate drive & protection logic
●Detection, protection & status indication circuits for over-current, short-circuit, over-temperature & under-voltage
(P-Fo available from upper leg devices)
●Acoustic noise-less 15/18.5kW class inverter application
Absolute maximum ratings (Tc=25°C unless without specified)
- Collector-Emitter voltage Vces:600V
- Gate-Emitter voltage VGES:±20V
- Collector current Ic Continuous Tc=25°C :200A
- Collector current Icp 1ms Tc=25°C :400A
- Collector power dissipation Pc:595W
- Isolation Voltage VIsol (AC 1 minute) :2500V
- Operating junction temperature Tj:+150°C
- Storage temperature Tstg :-20 to +125°C
- Mounting screw torque 2.5~3.5 N·m
- Weight 920g
