PM50CSD120 Product details
FEATURE
a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.
b) Using new Diode which is designed to get soft reverse recovery characteristics.
c) Keeping the package compatibility.
The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM.
• 3φ 50A, 1200V Current-sense IGBT for 15kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over current, short-circuit, over-temperature & under-voltage (P-Fo available from upper leg devices)
• Acoustic noise-less 5.5/7.5kW class inverter application
• UL Recognized Yellow Card No.E80276(N) File No.E80271
Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :50A
Collector current Icp 1ms Tc=25°C :100A
Collector power dissipation Pc:328W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:-20~+100°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 2.5~3.5 N·m
Weight 560g
