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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

IXTP50N25T

IXTP50N25T

IXTP50N25T Power Field-Effect Transistor, 50A I(D), 250V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN; IXTP50N25T
VI-21X-CY

VI-21X-CY

VI-21X-CY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-21X-CY
MMUN2114LT3G

MMUN2114LT3G

MMUN2114LT3G PNP Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 10000-REEL; MMUN2114LT3G
IXGA90N33TC

IXGA90N33TC

IXGA90N33TC Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, TO-263AB, TO-263AA, 3 PIN; IXGA90N33TC
GBJ606-F

GBJ606-F

GBJ606-F Bridge Rectifier Diode, 1 Phase, 6A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ, 4 PIN; GBJ606-F
VI-250-EW

VI-250-EW

VI-250-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-250-EW
VI-J7R-IX

VI-J7R-IX

VI-J7R-IX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-J7R-IX
ED431225

ED431225

ED431225 Silicon Controlled Rectifier, 393A I(T)RMS, 250000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element, POW-R-BLOK-7; ED431225
VI-J34-EY

VI-J34-EY

VI-J34-EY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-J34-EY
T72H123554DN

T72H123554DN

T72H123554DN Silicon Controlled Rectifier, 550A I(T)RMS, 350000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, CASE T72, 3 PIN; T72H123554DN