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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

QSX7TR

QSX7TR

QSX7TR Small Signal Bipolar Transistor, 1.5A I(C), 12V V(BR)CEO, 2-Element, NPN, Silicon, X07, 6 PIN; QSX7TR
VI-26H-IV

VI-26H-IV

VI-26H-IV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-26H-IV
VI-26N-IY

VI-26N-IY

VI-26N-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-26N-IY
2N3737

2N3737

2N3737 Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AB, TO-46, 3 PIN; 2N3737
MAC16HCN

MAC16HCN

MAC16HCN Triac, TO-220 3 LEAD STANDARD, 50-TUBE; MAC16HCN
CD421640A

CD421640A

CD421640A Silicon Controlled Rectifier, 63A I(T)RMS, 40000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, POW-R-BLOK-7; CD421640A
GA75TS120U

GA75TS120U

GA75TS120U Insulated Gate Bipolar Transistor, 110A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, INT-A-PAK-7; GA75TS120U
T7SH084064DN

T7SH084064DN

T7SH084064DN Silicon Controlled Rectifier, 628A I(T)RMS, 400000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, CASE T7S, 3 PIN; T7SH084064DN
MG150H2YL1

MG150H2YL1

MG150H2YL1 IGBT Module In-stock / Toshiba: 1200V 150A. Features high-speed switching for efficiency. 90-day warranty, ideal for welding & UPS. Get quote.
VI-21T-IW

VI-21T-IW

VI-21T-IW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-21T-IW