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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VS-26MT140

VS-26MT140

VS-26MT140 Bridge Rectifier Diode, 3 Phase, 25A, 1400V V(RRM), Silicon, ROHS COMPLIANT, D-63, 5 PIN; VS-26MT140
VI-2NR-IV

VI-2NR-IV

VI-2NR-IV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-2NR-IV
2SA2039-TL-E

2SA2039-TL-E

2SA2039-TL-E Bipolar Transistor, -50V, -5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA, DPAK / TP-FA, 700-REEL; 2SA2039-TL-E
SMBT3904DW1T1G

SMBT3904DW1T1G

SMBT3904DW1T1G Dual NPN Bipolar Transistor, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL; SMBT3904DW1T1G
V300C5C100A3

V300C5C100A3

V300C5C100A3 DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid; V300C5C100A3
MUN5131T1G

MUN5131T1G

MUN5131T1G PNP Bipolar Digital Transistor (BRT), SC-70 (SOT-323) 3 LEAD, 3000-REEL; MUN5131T1G
FW907-TL-E

FW907-TL-E

FW907-TL-E Power MOSFET 30V 10A 26 mOhm Dual Complementary SOP8, 1000-REEL; FW907-TL-E
DXT2013P5-13

DXT2013P5-13

DXT2013P5-13 Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, GREEN, PLASTIC, POWERDI 5, 3 PIN; DXT2013P5-13
APTGT50A170D1G

APTGT50A170D1G

APTGT50A170D1G Insulated Gate Bipolar Transistor, 70A I(C), 1700V V(BR)CES, N-Channel, MODULE-7; APTGT50A170D1G
QRF1415T30

QRF1415T30

QRF1415T30 Rectifier Diode, 1 Phase, 2 Element, 85A, 1400V V(RRM), Silicon, MODULE-3; QRF1415T30