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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-26V-IU

VI-26V-IU

VI-26V-IU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-26V-IU
TN6727A

TN6727A

TN6727A Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-226; TN6727A
VI-26D-CX

VI-26D-CX

VI-26D-CX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-26D-CX
IXSN40N60AU1

IXSN40N60AU1

IXSN40N60AU1 Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel; IXSN40N60AU1
VI-A11-CU

VI-A11-CU

VI-A11-CU Analog Circuit, 1 Func, PACKAGE-9; VI-A11-CU
VI-B5P-IV

VI-B5P-IV

VI-B5P-IV DC-DC Booster Module, 150W; VI-B5P-IV
FNA41060B2

FNA41060B2

FNA41060B2 Intelligent Power Module (IPM), Motion Control Longer Pins, 72-TUBE; FNA41060B2
T507084044AQ

T507084044AQ

T507084044AQ Silicon Controlled Rectifier, 63A I(T)RMS, 63000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-94, TO-94, 3 PIN; T507084044AQ
MJW21195G

MJW21195G

MJW21195G Bipolar Transistor, PNP, 250 V, 16 A, TO-247, 30-TUBE; MJW21195G
IRG4BC30FD-SPBF

IRG4BC30FD-SPBF

IRG4BC30FD-SPBF Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3; IRG4BC30FD-SPBF