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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-J3Z-CY

VI-J3Z-CY

VI-J3Z-CY DC-DC Regulated Power Supply Module, 1 Output, Hybrid,; VI-J3Z-CY
IKW50N60TA

IKW50N60TA

IKW50N60TA Insulated Gate Bipolar Transistor,; IKW50N60TA
MCD161-20io1

MCD161-20io1

MCD161-20io1 Silicon Controlled Rectifier, 300A I(T)RMS, 165000mA I(T), 2000V V(DRM), 2000V V(RRM), 1 Element, MODULE-5; MCD161-20io1
SMP1320-004LF

SMP1320-004LF

SMP1320-004LF Pin Diode, 50V V(BR), Silicon, GREEN, PLASTIC PACKAGE-3; SMP1320-004LF
VI-B3R-CU

VI-B3R-CU

VI-B3R-CU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-B3R-CU
DIM800DCM17-A

DIM800DCM17-A

DIM800DCM17-A Insulated Gate Bipolar Transistor, 800A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, D, 7 PIN
2N4403TFR

2N4403TFR

2N4403TFR PNP Bipolar Transistor, TO-92, 2000-REEL; 2N4403TFR
DSA200200L

DSA200200L

DSA200200L Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B-B, SC-59A, 3 PIN; DSA200200L
MCD312-18io1

MCD312-18io1

MCD312-18io1 Silicon Controlled Rectifier, 520A I(T)RMS, 320000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element,; MCD312-18io1
SMA4036

SMA4036

SMA4036 Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 6-Element, NPN, Silicon, Plastic/Epoxy, 15 Pin, SMA, SIP-15; SMA4036