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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

DSC5C01S0L

DSC5C01S0L

DSC5C01S0L Small Signal Bipolar Transistor, 0.02A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI3-F2-B, SC-85, 3 PIN; DSC5C01S0L
MMSTA13-7

MMSTA13-7

MMSTA13-7 Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC , ULTRA SMALL PACKAGE-3; MMSTA13-7
PE250HB160

PE250HB160

PE250HB160 Silicon Controlled Rectifier, 250000mA I(T), 1600V V(RRM); PE250HB160
SKT351F08DU

SKT351F08DU

SKT351F08DU Silicon Controlled Rectifier, 900A I(T)RMS, 350000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB; SKT351F08DU
DMC266050R

DMC266050R

DMC266050R Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, SC-74, 6 PIN; DMC266050R
PBMB150A6

PBMB150A6

PBMB150A6 Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel; PBMB150A6
P2H4M441L

P2H4M441L

P2H4M441L Power Field-Effect Transistor, 21A I(D), 450V, 0.21ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8; P2H4M441L
BC847QAPNZ

BC847QAPNZ

BC847QAPNZ BC847QAPN - 45 V, 100 mA NPN/PNP general-purpose transistor DFN 6-Pin; BC847QAPNZ
P2H7M441L

P2H7M441L

P2H7M441L Power Field-Effect Transistor, 35A I(D), 450V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8; P2H7M441L
VI-2NP-EX

VI-2NP-EX

VI-2NP-EX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-2NP-EX