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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MCC44-18io8B

MCC44-18io8B

MCC44-18io8B Silicon Controlled Rectifier, 80A I(T)RMS, 49000mA I(T), 1800V V(DRM), 1800V V(RRM), 2 Element, TO-240AA, TO-240AA, 5 PIN; MCC44-18io8B
MPSA92RLRMG

MPSA92RLRMG

MPSA92RLRMG PNP Bipolar Small Signal Transistor, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD; MPSA92RLRMG
APTGT150DA170D1G

APTGT150DA170D1G

APTGT150DA170D1G Insulated Gate Bipolar Transistor, 280A I(C), 1700V V(BR)CES, N-Channel, MODULE-7; APTGT150DA170D1G
DRA5124T0L

DRA5124T0L

DRA5124T0L Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI3-F2-B, SC-85, 3 PIN; DRA5124T0L
MBRT12045R

MBRT12045R

MBRT12045R 45V 120A Silicon Schottky Rectifier in Three Tower Package; MBRT12045R
VI-BTR-EW

VI-BTR-EW

VI-BTR-EW DC-DC Booster Module, 1 Output, 100W, Hybrid, PACKAGE-9; VI-BTR-EW
KSC5027OTU

KSC5027OTU

KSC5027OTU NPN Silicon Transistor, 1000-TUBE; KSC5027OTU
AOTF5B60D

AOTF5B60D

AOTF5B60D Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel; AOTF5B60D
SKP02N120

SKP02N120

SKP02N120 Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC PACKAGE-3; SKP02N120
ZDT649TC

ZDT649TC

ZDT649TC Power Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN; ZDT649TC