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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

TD106N08

TD106N08

TD106N08 Silicon Controlled Rectifier, 180A I(T)RMS, 106000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element,; TD106N08
DIM3600ESM17-E

DIM3600ESM17-E

DIM3600ESM17-E Insulated Gate Bipolar Transistor, 3600A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, E, 9 PIN; DIM3600ESM17-E
Q4015R567

Q4015R567

Q4015R567 TRIAC, 400V V(DRM), 15A I(T)RMS, TO-220, 2 PIN; Q4015R567
VI-22N-CY

VI-22N-CY

VI-22N-CY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-22N-CY
MG400V1US51

MG400V1US51

MG400V1US51 IGBT Module In-stock / Toshiba: 600V 400A. High-speed switching, low Vce(sat). 90-day warranty, VFD applications. Global fast shipping. Get quote.
VI-J71-CZ

VI-J71-CZ

VI-J71-CZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J71-CZ
VI-23B-CU

VI-23B-CU

VI-23B-CU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, MODULE-9; VI-23B-CU
IRF7342PBF

IRF7342PBF

IRF7342PBF Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8; IRF7342PBF
445CNQ015

445CNQ015

445CNQ015 DIODE 440 A, 15 V, SILICON, RECTIFIER DIODE, TO-244AB, Rectifier Diode; 445CNQ015
DMA566030R

DMA566030R

DMA566030R Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, SC-113DB, 6 PIN; DMA566030R