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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

CPT600100

CPT600100

CPT600100 Rectifier Diode, Schottky, 1 Phase, 2 Element, 300A, 100V V(RRM), Silicon, PACKAGE-2; CPT600100
UFT7130D

UFT7130D

UFT7130D Rectifier Diode, 1 Phase, 2 Element, 35A, 300V V(RRM), Silicon, PACKAGE-3; UFT7130D
VI-26K-CV

VI-26K-CV

VI-26K-CV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-26K-CV
IRF530STRLPBF

IRF530STRLPBF

IRF530STRLPBF Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3; IRF530STRLPBF
MCC72-16io1B

MCC72-16io1B

MCC72-16io1B Silicon Controlled Rectifier, 180A I(T)RMS, 85000mA I(T), 1600V V(DRM), 1600V V(RRM), 2 Element, TO-240AA, TO-240AA, 7 PIN; MCC72-16io1B
T507088034AQ

T507088034AQ

T507088034AQ Silicon Controlled Rectifier, 125A I(T)RMS, 125000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-94, TO-94, 3 PIN; T507088034AQ
VI-B7M-IW

VI-B7M-IW

VI-B7M-IW DC-DC Booster Module, 1 Output, 100W, Hybrid, PACKAGE-9; VI-B7M-IW
Q2008DH3TP

Q2008DH3TP

Q2008DH3TP Alternistor TRIAC, 200V V(DRM), 8A I(T)RMS, TO-252AA, DPAK-3; Q2008DH3TP
2SD2396K

2SD2396K

2SD2396K Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FN, 3 PIN; 2SD2396K
STPS30L60CT

STPS30L60CT

STPS30L60CT 60 V, 30 A dual Low Drop Power Schottky Rectifier; STPS30L60CT