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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

TPDV640RG

TPDV640RG

TPDV640RG 40A high-voltage Triacs; TPDV640RG
2N6338G

2N6338G

2N6338G 25 A, 100 V NPN Bipolar Power Transistor, TO-204 (TO-3), 100-FTRAY; 2N6338G
VI-B61-IU

VI-B61-IU

VI-B61-IU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-B61-IU
VI-J5N-IZ

VI-J5N-IZ

VI-J5N-IZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J5N-IZ
A451PN

A451PN

A451PN Rectifier Diode, 1 Phase, 1 Element, 2500A, 1800V V(RRM), Silicon,; A451PN
CM400DU-24F

CM400DU-24F

CM400DU-24F IGBT Module In-stock / Mitsubishi: 1200V 400A Dual. High-efficiency Trench Gate. 90-day warranty, VFD/UPS applications. Global shipping. Get quote.
MURHB860CT

MURHB860CT

MURHB860CT Power Rectifier, Ultra-Fast Recovery, 8 A, 600 V, D2PAK 2 LEAD, 50-TUBE; MURHB860CT
JFTJ105

JFTJ105

JFTJ105 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET; JFTJ105
BXB50-48S3V3FLT

BXB50-48S3V3FLT

BXB50-48S3V3FLT DC-DC Regulated Power Supply Module, 1 Output, 33W, Hybrid, 2.400 X 2.280 INCH, 0.500 INCH HEIGHT, PACKAGE-9; BXB50-48S3V3FLT
MII75-12A3

MII75-12A3

MII75-12A3 Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; MII75-12A3