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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

CPH5901F-TL-E

CPH5901F-TL-E

CPH5901F-TL-E N-Channel JFET and NPN Bipolar Transistor, 15V, 6 to 20mA, 50V, 150mA, Composite type CPH5, CPH5, 3000-REEL; CPH5901F-TL-E
DMG263020R

DMG263020R

DMG263020R Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI6-F3-B, SC-107C, 6 PIN; DMG263020R
APTGT75DA120T1G

APTGT75DA120T1G

APTGT75DA120T1G Insulated Gate Bipolar Transistor, 110A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP1, 12 PIN; APTGT75DA120T1G
VI-B4F-CW

VI-B4F-CW

VI-B4F-CW DC-DC Booster Module, 100W; VI-B4F-CW
MCD132-08io1

MCD132-08io1

MCD132-08io1 IXYS Thyristor/Diode Module Silicon 300A 800V
FS300R12KE4

FS300R12KE4

FS300R12KE4 Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel, MODULE-29; FS300R12KE4
PDT1008

PDT1008

PDT1008 Silicon Controlled Rectifier, 156A I(T)RMS, 100000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element,; PDT1008
TD170N08KOF

TD170N08KOF

TD170N08KOF Silicon Controlled Rectifier, 350A I(T)RMS, 170000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element,; TD170N08KOF
VI-J7R-CY

VI-J7R-CY

VI-J7R-CY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-J7R-CY
VI-J6B-IZ

VI-J6B-IZ

VI-J6B-IZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J6B-IZ