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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

PB66

PB66

PB66 Bridge Rectifier Diode, 1 Phase, 6A, 600V V(RRM), Silicon, PLASTIC, PB-6, 4 PIN; PB66
SEMIX101GD066HDS

SEMIX101GD066HDS

SEMIX101GD066HDS Insulated Gate Bipolar Transistor, 140A I(C), 600V V(BR)CES, N-Channel, CASE SEMIX 13S, 20 PIN; SEMIX101GD066HDS
C355M

C355M

C355M Silicon Controlled Rectifier, 274.75A I(T)RMS, 250000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, T62, 3 PIN; C355M
TIP120G

TIP120G

TIP120G Medium Power NPN Darlington Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE; TIP120G
2SB1216S-E

2SB1216S-E

2SB1216S-E Bipolar Transistor, -100V, -4A, Low VCE(sat), PNP Single, IPAK / TP, 500-BLKBG; 2SB1216S-E
ZXT10N20DE6TC

ZXT10N20DE6TC

ZXT10N20DE6TC Power Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin, SUPERSOT-6; ZXT10N20DE6TC
IRG4PC50FD-EPBF

IRG4PC50FD-EPBF

IRG4PC50FD-EPBF Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN; IRG4PC50FD-EPBF
VI-B50-IU

VI-B50-IU

VI-B50-IU DC-DC Booster Module; VI-B50-IU
PC2008

PC2008

PC2008 Rectifier Diode, 1 Phase, 2 Element, 200A, 800V V(RRM), Silicon,; PC2008
VI-JWZ-EZ

VI-JWZ-EZ

VI-JWZ-EZ DC-DC Regulated Power Supply Module, 1 Output, Hybrid,; VI-JWZ-EZ