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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

PBSS4350SSJ

PBSS4350SSJ

PBSS4350SSJ PBSS4350SS - 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor SOIC 8-Pin; PBSS4350SSJ
DTD113EKT146

DTD113EKT146

DTD113EKT146 Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMT3, SC-59, 3 PIN; DTD113EKT146
CMA80PD1600NA

CMA80PD1600NA

CMA80PD1600NA Silicon Controlled Rectifier, 80000mA I(T), 1600V V(RRM),; CMA80PD1600NA
2DD1664Q-13

2DD1664Q-13

2DD1664Q-13 Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC, SOT89-3L, 4 PIN; 2DD1664Q-13
Q4016NH6TP

Q4016NH6TP

Q4016NH6TP Alternistor TRIAC, 400V V(DRM), 16A I(T)RMS, TO-263AB, TO-263, D2PAK-3; Q4016NH6TP
EMT2T2R

EMT2T2R

EMT2T2R Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, EMT6, 6 PIN; EMT2T2R
2N5062G

2N5062G

2N5062G Silicon Controlled Rectifier - SCR, TO-92 (TO-226) 5.33mm Body Height, 5000-BLKBX; 2N5062G
MRF6S9060MBR1

MRF6S9060MBR1

MRF6S9060MBR1 RF Power Field-Effect Transistor; MRF6S9060MBR1
VI-J7Z-EY

VI-J7Z-EY

VI-J7Z-EY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-J7Z-EY
T9G0021003DH

T9G0021003DH

T9G0021003DH Silicon Controlled Rectifier, 1570A I(T)RMS, 1000000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, T9G, 3 PIN; T9G0021003DH