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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VIO100-06P1

VIO100-06P1

VIO100-06P1 Insulated Gate Bipolar Transistor, 93A I(C), 600V V(BR)CES, N-Channel, ECOPAC-8; VIO100-06P1
CT230402

CT230402

CT230402 Silicon Controlled Rectifier, 20000mA I(T), 400V V(RRM),; CT230402
VI-271-CU

VI-271-CU

VI-271-CU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, MODULE-9; VI-271-CU
2SB1695KT146

2SB1695KT146

2SB1695KT146 Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SC-59, 3 PIN; 2SB1695KT146
VI-26P-EV

VI-26P-EV

VI-26P-EV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-26P-EV
IXYH50N65C3H1

IXYH50N65C3H1

IXYH50N65C3H1 Insulated Gate Bipolar Transistor,; IXYH50N65C3H1
QK008VH4TP

QK008VH4TP

QK008VH4TP Alternistor TRIAC, 1000V V(DRM), 8A I(T)RMS, TO-251AA, VPAK-3; QK008VH4TP
2SA1162GT1

2SA1162GT1

2SA1162GT1 General Purpose Amplifier Transistors, SC-59 3 LEAD, 3000-REEL; 2SA1162GT1
5SNA1600N170100

5SNA1600N170100

5SNA1600N170100 Insulated Gate Bipolar Transistor, 1600A I(C), 1700V V(BR)CES, N-Channel, HIPAK-7; 5SNA1600N170100
B532-2T

B532-2T

B532-2T Silicon Controlled Rectifier, 27000mA I(T), 600V V(RRM), 2 Element, ROHS COMPLIANT PACKAGE-6; B532-2T