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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

Q8008VH4TP

Q8008VH4TP

Q8008VH4TP Alternistor TRIAC, 800V V(DRM), 8A I(T)RMS, TO-251AA, VPAK-3; Q8008VH4TP
T627042584DN

T627042584DN

T627042584DN Silicon Controlled Rectifier, 400A I(T)RMS, 400000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, CASE T62, 3 PIN; T627042584DN
VI-21T-CV

VI-21T-CV

VI-21T-CV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid, MODULE-9; VI-21T-CV
APTGF25A120T1G

APTGF25A120T1G

APTGF25A120T1G Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP1, 12 PIN; APTGF25A120T1G
GBJ2001

GBJ2001

GBJ2001 Bridge Rectifier Diode, 1 Phase, 20A, 100V V(RRM), Silicon, PLASTIC, GBJ, 4 PIN; GBJ2001
ZXMD65N02N8TA

ZXMD65N02N8TA

ZXMD65N02N8TA Small Signal Field-Effect Transistor, 6.6A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8; ZXMD65N02N8TA
2SC5876T106R

2SC5876T106R

2SC5876T106R Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, 3 PIN; 2SC5876T106R
F1827CAD1000

F1827CAD1000

F1827CAD1000 Rectifier Diode, 1 Phase, 2 Element, 25A, 1000V V(RRM), Silicon, MODULE-3; F1827CAD1000
VI-23K-EV

VI-23K-EV

VI-23K-EV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-23K-EV
VI-J0Y-CZ

VI-J0Y-CZ

VI-J0Y-CZ DC-DC Regulated Power Supply Module, 1 Output, Hybrid,; VI-J0Y-CZ