2MI50S-050 Power Field-Effect Transistor, 50A I(D), 500V, 0.11ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; 2MI50S-050
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.