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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

2MI50S-050

2MI50S-050

2MI50S-050 Power Field-Effect Transistor, 50A I(D), 500V, 0.11ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; 2MI50S-050
IXGP50N60C4

IXGP50N60C4

IXGP50N60C4 Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN; IXGP50N60C4
APTGT50SK170D1G

APTGT50SK170D1G

APTGT50SK170D1G Insulated Gate Bipolar Transistor, 70A I(C), 1700V V(BR)CES, N-Channel, MODULE-7; APTGT50SK170D1G
VI-J1V-EW

VI-J1V-EW

VI-J1V-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, HALF BRICK PACKAGE-9; VI-J1V-EW
KS524575

KS524575

KS524575 Power Bipolar Transistor, 75A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon; KS524575
PDH1008

PDH1008

PDH1008 Silicon Controlled Rectifier, 156A I(T)RMS, 100000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element,; PDH1008
2SB1588

2SB1588

2SB1588 Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, FM100, 3 PIN; 2SB1588
L6006V5

L6006V5

L6006V5 4 Quadrant Logic Level TRIAC, 600V V(DRM), 6A I(T)RMS, TO-251, VPAK-3; L6006V5
VI-J13-IZ

VI-J13-IZ

VI-J13-IZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J13-IZ
DMC204020R

DMC204020R

DMC204020R Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, SC-74, 6 PIN; DMC204020R