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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-B1B-IU

VI-B1B-IU

VI-B1B-IU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-B1B-IU
JANTX2N3501UB

JANTX2N3501UB

JANTX2N3501UB Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon,; JANTX2N3501UB
VI-251-IU

VI-251-IU

VI-251-IU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, MODULE-9; VI-251-IU
F1857CCH600

F1857CCH600

F1857CCH600 Silicon Controlled Rectifier, 86.35A I(T)RMS, 55000mA I(T), 600V V(RRM), 1 Element, ROHS COMPLIANT PACKAGE-5; F1857CCH600
AO4952

AO4952

AO4952 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; AO4952
IRKT26-12

IRKT26-12

IRKT26-12 Silicon Controlled Rectifier, 39.25 A, 1200 V, SCR, TO-240AA; IRKT26-12
VI-J7R-EX

VI-J7R-EX

VI-J7R-EX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-J7R-EX
T707103054BY

T707103054BY

T707103054BY Silicon Controlled Rectifier, 475A I(T)RMS, 475000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, CASE T70, 3 PIN; T707103054BY
KD421215A

KD421215A

KD421215A Power Bipolar Transistor, 150A I(C), 1200V V(BR)CEO, 2-Element, NPN, Silicon, MODULE-15; KD421215A
F1827CCH1000

F1827CCH1000

F1827CCH1000 Silicon Controlled Rectifier, 39.25A I(T)RMS, 25000mA I(T), 1000V V(RRM), 1 Element, ROHS COMPLIANT PACKAGE-5; F1827CCH1000