GMM3X160-0055X2-SMD Power Field-Effect Transistor, 150A I(D), 55V, 0.0031ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD, 24 PIN; GMM3X160-0055X2-SMD
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.