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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

IXFN48N60P

IXFN48N60P

IXFN48N60P Power Field-Effect Transistor, 40A I(D), 600V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4; IXFN48N60P
MCC56-12I01

MCC56-12I01

MCC56-12I01 Silicon Controlled Rectifier, 60000mA I(T), 1200V V(RRM); MCC56-12I01
DDTC122TE-7

DDTC122TE-7

DDTC122TE-7 Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3; DDTC122TE-7
BC556BTF

BC556BTF

BC556BTF PNP Epitaxial Silicon Transistor, 2000-REEL; BC556BTF
IXYP15N65C3D1M

IXYP15N65C3D1M

IXYP15N65C3D1M Insulated Gate Bipolar Transistor,; IXYP15N65C3D1M
PCHMB100B12

PCHMB100B12

PCHMB100B12 Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-5; PCHMB100B12
B533-2T

B533-2T

B533-2T Silicon Controlled Rectifier, 27000mA I(T), 800V V(RRM), 2 Element, ROHS COMPLIANT PACKAGE-6; B533-2T
PPD1R5-12-1212

PPD1R5-12-1212

PPD1R5-12-1212 Analog Circuit,; PPD1R5-12-1212
2SC5200RTU

2SC5200RTU

2SC5200RTU NPN Epitaxial Silicon Transistor, 375-TUBE; 2SC5200RTU
VI-2N4-CY

VI-2N4-CY

VI-2N4-CY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-2N4-CY