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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

TM90DZ-24

TM90DZ-24

TM90DZ-24 Silicon Controlled Rectifier, 141.3A I(T)RMS, 90000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element,; TM90DZ-24
MGD623N

MGD623N

MGD623N Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, TO-3P, PIN; MGD623N
MV209RLRA

MV209RLRA

MV209RLRA VHF BAND, 29pF, 30V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-92, CASE 182-06, TO-226AC, 2 PIN; MV209RLRA
V300C5C100AL2

V300C5C100AL2

V300C5C100AL2 DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid; V300C5C100AL2
STTA6006TV2

STTA6006TV2

STTA6006TV2 30A, 600V, SILICON, RECTIFIER DIODE, PLASTIC, ISOTOP-4; STTA6006TV2
IGW50N65H5FKSA1

IGW50N65H5FKSA1

IGW50N65H5FKSA1 Insulated Gate Bipolar Transistor,; IGW50N65H5FKSA1
DDTC143XCA-7

DDTC143XCA-7

DDTC143XCA-7 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3; DDTC143XCA-7
MIO1200-25E10

MIO1200-25E10

MIO1200-25E10 Insulated Gate Bipolar Transistor, 1200A I(C), 2500V V(BR)CES, N-Channel, MODULE-9; MIO1200-25E10
T727024844DN

T727024844DN

T727024844DN Silicon Controlled Rectifier, 750A I(T)RMS, 750000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, CASE T72, 3 PIN; T727024844DN
MCD250-12io1

MCD250-12io1

MCD250-12io1 Silicon Controlled Rectifier, 450A I(T)RMS, 287000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, MODULE-5; MCD250-12io1