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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-JN3-EW

VI-JN3-EW

VI-JN3-EW VICOR DC-DC Regulated Power Supply Module, Output, 100W, 20A Hybrid, HALF BRICK PACKAGE-9
MRF8S9170NR3

MRF8S9170NR3

MRF8S9170NR3 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET; MRF8S9170NR3
BS17US25V10

BS17US25V10

BS17US25V10 Electric Fuse, 10A, 250VAC, 160000A (IR), Inline/holder,; BS17US25V10
W4096ZD340

W4096ZD340

W4096ZD340 DIODE 4096 A, 3400 V, SILICON, RECTIFIER DIODE, Rectifier Diode; W4096ZD340
VI-B2R-CU

VI-B2R-CU

VI-B2R-CU DC-DC Booster Module; VI-B2R-CU
VW2X45-12IO1

VW2X45-12IO1

VW2X45-12IO1 Silicon Controlled Rectifier, 32A I(T)RMS, 20000mA I(T), 1200V V(DRM), 1200V V(RRM), 4 Element, MODULE-8; VW2X45-12IO1
FS10R06VE3

FS10R06VE3

FS10R06VE3 Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, MODULE-13; FS10R06VE3
2N4403-AP

2N4403-AP

2N4403-AP Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3; 2N4403-AP
T607021884BT

T607021884BT

T607021884BT Silicon Controlled Rectifier, 275A I(T)RMS, 275000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-93, TO-93, 3 PIN; T607021884BT
T72H023564DN

T72H023564DN

T72H023564DN Silicon Controlled Rectifier, 550A I(T)RMS, 550000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, CASE T72, 3 PIN; T72H023564DN