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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-JW2-CX

VI-JW2-CX

Data SheetVI-J00, VE-J00Half Brick DC-DC Converters25 to 100 Watts 24V/15V/75W
QM100HY-2H

QM100HY-2H

QM100HY-2H IGBT Module In-stock / Mitsubishi: 1000V 100A. High-power switching. 90-day warranty, industrial motor drive. Global shipping. Request pricing now.
MG25Q1BS11

MG25Q1BS11

MG25Q1BS11 25A/1200V/IGBT/1U; MG25Q1BS11
VI-2WR-EW

VI-2WR-EW

VI-2WR-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, MODULE-9; VI-2WR-EW
CR2L-100

CR2L-100

CR2L-100 Electric Fuse, Super Fast Blow, 100A, 250VAC, 100000A (IR), Inline/holder,; CR2L-100
ULN2003AIPWRG4

ULN2003AIPWRG4

ULN2003AIPWRG4 High-Voltage, High-Current Darlington Transistor Array 16-TSSOP -40 to 105; ULN2003AIPWRG4
VJ647M

VJ647M

VJ647M Bridge Rectifier Diode, Avalanche, 1 Phase, 10A, Silicon, PACKAGE-4; VJ647M
BDW53B-S

BDW53B-S

BDW53B-S Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3; BDW53B-S
MV2105

MV2105

MV2105 30 V Tuning Diode C2/C30 = 2.5-3.2, TO-92 (TO-226) 5.33mm Body Height, 1000-BLKBX; MV2105
AON7534

AON7534

AON7534 Power Field-Effect Transistor, 30A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DFN-8; AON7534