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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

SG2023J-DESC

SG2023J-DESC

SG2023J-DESC Small Signal Bipolar Transistor, 0.5A I(C), 95V V(BR)CEO, 7-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC PACKAGE-16; SG2023J-DESC
IXGX72N60B3H1

IXGX72N60B3H1

IXGX72N60B3H1 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, PLUS247, 3 PIN; IXGX72N60B3H1
UFT14140D

UFT14140D

UFT14140D Rectifier Diode, 1 Phase, 2 Element, 70A, 400V V(RRM), Silicon, TO-249, TO-249, 3 PIN; UFT14140D
HSMP-3894-TR2G

HSMP-3894-TR2G

HSMP-3894-TR2G Pin Diode, 100V V(BR), Silicon, LEAD FREE PACKAGE-3; HSMP-3894-TR2G
2SC3835

2SC3835

2SC3835 Power Bipolar Transistor, 7A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-100, TO-3P, 3 PIN; 2SC3835
S6015L53

S6015L53

S6015L53 Silicon Controlled Rectifier, 15A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN; S6015L53
VI-J2X-CZ

VI-J2X-CZ

VI-J2X-CZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J2X-CZ
2SC4271E

2SC4271E

2SC4271E RF Power Bipolar Transistor, 1-Element, Silicon, NPN, TO-126, TO-126, 3 PIN; 2SC4271E
SW12CXC2850

SW12CXC2850

SW12CXC2850 Rectifier Diode, 1 Phase, 1 Element, 6286A, 1200V V(RRM), Silicon,; SW12CXC2850
VI-BW4-CW

VI-BW4-CW

VI-BW4-CW DC-DC Booster Module, 1 Output, 100W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-BW4-CW