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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

BAT54V-TP

BAT54V-TP

BAT54V-TP Rectifier Diode, Schottky, 2 Element, 0.2A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6; BAT54V-TP
DF60BA40

DF60BA40

DF60BA40 Bridge Rectifier Diode, 60A, 400V V(RRM),; DF60BA40
V24C15T100A3

V24C15T100A3

V24C15T100A3 DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid; V24C15T100A3
S4008DTP

S4008DTP

S4008DTP Silicon Controlled Rectifier, 8A I(T)RMS, 5100mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3; S4008DTP
FM200TU-3A

FM200TU-3A

FM200TU-3A Power Field-Effect Transistor, 100A I(D), 150V, 0.0066ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-14; FM200TU-3A
QS8J4TR

QS8J4TR

QS8J4TR Power Field-Effect Transistor, 4A I(D), 30V, 0.056ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSMT8, 8 PIN; QS8J4TR
VI-273-IV

VI-273-IV

VI-273-IV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-273-IV
2N3055G

2N3055G

2N3055G 15 A, 60 V NPN Bipolar Power Transistor, TO-204 (TO-3), 100-FTRAY; 2N3055G
T600161804BT

T600161804BT

T600161804BT Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, TO-93, HERMETIC SEALED, T60, 3 PIN; T600161804BT
L6006D8TP

L6006D8TP

L6006D8TP 4 Quadrant Logic Level TRIAC, 600V V(DRM), 6A I(T)RMS, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2; L6006D8TP