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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-JWB-EW

VI-JWB-EW

VI-JWB-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, HALF BRICK PACKAGE-9; VI-JWB-EW
TM90EZ-24

TM90EZ-24

TM90EZ-24 Silicon Controlled Rectifier, 141.3A I(T)RMS, 90000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element,; TM90EZ-24
R9G01818XX

R9G01818XX

R9G01818XX Rectifier Diode, 1 Phase, 1 Element, 1800A, 1800V V(RRM), Silicon, HERMETIC SEALED, CASE R9G, 2 PIN; R9G01818XX
2N5432-E3

2N5432-E3

2N5432-E3 Transistor; 2N5432-E3
MP1006G-G

MP1006G-G

MP1006G-G Bridge Rectifier Diode, 10A, 600V V(RRM),; MP1006G-G
M505044

M505044

M505044 Silicon Controlled Rectifier, 50000mA I(T), 1000V V(RRM), 2 Element, MODULE-6; M505044
APT25GR120SSCD10

APT25GR120SSCD10

APT25GR120SSCD10 Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel,; APT25GR120SSCD10
MMUN2230LT1G

MMUN2230LT1G

MMUN2230LT1G NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL; MMUN2230LT1G
MG30G6EL1

MG30G6EL1

MG30G6EL1 IGBT Module In-stock / Toshiba: 600V 30A. High-speed switching for motor drives and UPS. 90-day warranty. Global fast shipping. Request pricing now.
L4N5

L4N5

L4N5 4 Quadrant Logic Level TRIAC, 400V V(DRM), 1A I(T)RMS, MODIFIED DO-214AA; L4N5