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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

APTGF75DA120T1G

APTGF75DA120T1G

APTGF75DA120T1G Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP1, 12 PIN; APTGF75DA120T1G
BDW74B-S

BDW74B-S

BDW74B-S Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN; BDW74B-S
ZTX1051ASTZ

ZTX1051ASTZ

ZTX1051ASTZ Transistor; ZTX1051ASTZ
CM150TL-24NF

CM150TL-24NF

CM150TL-24NF IGBT Module In-stock / Mitsubishi: 1200V 150A. Efficient 6-pack power conversion. 90-day warranty, motor drives & UPS. Global fast shipping. Get quote.
BCV46TC

BCV46TC

BCV46TC Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN; BCV46TC
7MBP100RA060

7MBP100RA060

7MBP100RA060 Fuji Electric PIM for electric forklift traction drives. Rated 600V and 100A with integrated protection. Source via Shunlongwei.
MSG60L43

MSG60L43

MSG60L43 Silicon Controlled Rectifier, 47 A, 800 V, SCR; MSG60L43
VI-J4L-IX

VI-J4L-IX

VI-J4L-IX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-J4L-IX
T7SH104064DN

T7SH104064DN

T7SH104064DN Silicon Controlled Rectifier, 628A I(T)RMS, 400000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, CASE T7S, 3 PIN; T7SH104064DN
FJP5200RTU

FJP5200RTU

FJP5200RTU NPN Epitaxial Silicon Transistor, 1000-TUBE; FJP5200RTU