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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

IXFN38N80Q2

IXFN38N80Q2

IXFN38N80Q2 Power Field-Effect Transistor, 38A I(D), 800V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4; IXFN38N80Q2
MCC310-08IO1

MCC310-08IO1

MCC310-08IO1 Silicon Controlled Rectifier, 500A I(T)RMS, 520000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element, MODULE-7; MCC310-08IO1
MUBW50-06A7

MUBW50-06A7

MUBW50-06A7 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel,; MUBW50-06A7
APT45M100J

APT45M100J

APT45M100J Power Field-Effect Transistor, 45A I(D), 1000V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOTOP-4; APT45M100J
S4040RQ

S4040RQ

S4040RQ Silicon Controlled Rectifier; S4040RQ
VI-J5Z-CY

VI-J5Z-CY

VI-J5Z-CY DC-DC Regulated Power Supply Module, 1 Output, Hybrid,; VI-J5Z-CY
SW18CXC26C

SW18CXC26C

SW18CXC26C Rectifier Diode, 1 Phase, 1 Element, 5843A, 1800V V(RRM), Silicon,; SW18CXC26C
MITA15WB1200TMH

MITA15WB1200TMH

MITA15WB1200TMH Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, MODULE-25; MITA15WB1200TMH
2SB1474TL

2SB1474TL

2SB1474TL Small Signal Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, CPT3, SC-63, 3 PIN; 2SB1474TL
VI-B40-IU

VI-B40-IU

VI-B40-IU VICOR DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9