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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-23R-EW

VI-23R-EW

VI-23R-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-23R-EW
2SC6096-TD-E

2SC6096-TD-E

2SC6096-TD-E Bipolar Transistor, 100V, 2A, Low VCE(sat), NPN Single PCP, SOT-89 / PCP-1, 1000-REEL; 2SC6096-TD-E
VI-20F-IY

VI-20F-IY

VI-20F-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-20F-IY
PH150F280-5

PH150F280-5

PH150F280-5 DC-DC Regulated Power Supply Module, 1 Output, 150W,; PH150F280-5
FS30R06XE3

FS30R06XE3

FS30R06XE3 Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel, MODULE-16; FS30R06XE3
DMP2004DWK-7

DMP2004DWK-7

DMP2004DWK-7 Small Signal Field-Effect Transistor, 0.43A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6; DMP2004DWK-7
VS-401CNQ045PBF

VS-401CNQ045PBF

VS-401CNQ045PBF Rectifier Diode, Schottky, 1 Phase, 2 Element, 45V V(RRM), Silicon, TO-244, LEAD FREE PACKAGE-2; VS-401CNQ045PBF
VI-23R-EV

VI-23R-EV

VI-23R-EV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-23R-EV
MIXA30WB1200TED

MIXA30WB1200TED

MIXA30WB1200TED Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, E2-PACK-24; MIXA30WB1200TED
TCR22-4RP

TCR22-4RP

TCR22-4RP Silicon Controlled Rectifier, 1.5A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-92; TCR22-4RP