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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

IRFS4010TRL7PP

IRFS4010TRL7PP

IRFS4010TRL7PP Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,; IRFS4010TRL7PP
VUI9-06N7

VUI9-06N7

VUI9-06N7 Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel,; VUI9-06N7
MDR250A30L

MDR250A30L

MDR250A30L Rectifier Diode, 1 Element, 250A, 300V V(RRM); MDR250A30L
ESAH73-03N

ESAH73-03N

ESAH73-03N Rectifier Diode, 100A, 300V V(RRM),; ESAH73-03N
VI-JTX-IY

VI-JTX-IY

VI-JTX-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-JTX-IY
MSCD200-18

MSCD200-18

MSCD200-18 Rectifier Diode, 1 Phase, 2 Element, 200A, 1800V V(RRM), Silicon, CASE D2, 3 PIN; MSCD200-18
V24A28C400AS

V24A28C400AS

V24A28C400AS DC-DC Regulated Power Supply Module, 1 Output, 400W, Hybrid; V24A28C400AS
SW20PHR380

SW20PHR380

SW20PHR380 DIODE 370 A, 2000 V, SILICON, RECTIFIER DIODE, Rectifier Diode; SW20PHR380
MBRB2045CT

MBRB2045CT

MBRB2045CT Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-263AB, LEAD FREE, PLASTIC, TO-263, 3/2 PIN; MBRB2045CT
2SC3856

2SC3856

2SC3856 Power Bipolar Transistor, 15A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-100, TO-3P, 3 PIN; 2SC3856