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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

LX803MEAP

LX803MEAP

LX803MEAP 4 Quadrant Logic Level TRIAC, 600V V(DRM), 0.8A I(T)RMS, TO-92, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3; LX803MEAP
2SC5060TV2M

2SC5060TV2M

2SC5060TV2M Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, ATV, 3 PIN; 2SC5060TV2M
MCC250-08io1

MCC250-08io1

MCC250-08io1 Silicon Controlled Rectifier, 450A I(T)RMS, 450000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element, MODULE-7; MCC250-08io1
VI-JWL-IY

VI-JWL-IY

VI-JWL-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-JWL-IY
AON6926

AON6926

AON6926 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; AON6926
ZXMC3A17DN8TA

ZXMC3A17DN8TA

ZXMC3A17DN8TA Small Signal Field-Effect Transistor, 5.4A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8; ZXMC3A17DN8TA
VUO16012NO7

VUO16012NO7

VUO16012NO7 Bridge Rectifier Diode, 3 Phase, 139A, 1200V V(RRM), Silicon, ROHS COMPLIANT, MODULE-5; VUO16012NO7
2N6427RLRA

2N6427RLRA

2N6427RLRA NPN Bipolar Darlington Transistor, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL; 2N6427RLRA
PCHMB300B12

PCHMB300B12

PCHMB300B12 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-5; PCHMB300B12
VI-J1F-CZ

VI-J1F-CZ

VI-J1F-CZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J1F-CZ