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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

Q8025NH6TP

Q8025NH6TP

Q8025NH6TP Alternistor TRIAC, 800V V(DRM), 25A I(T)RMS, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3; Q8025NH6TP
MCD72-18IO1B

MCD72-18IO1B

MCD72-18IO1B Silicon Controlled Rectifier, 180A I(T)RMS, 85000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element, TO-240AA, TO-240AA, 5 PIN; MCD72-18IO1B
ZXTN2010ASTZ

ZXTN2010ASTZ

ZXTN2010ASTZ Small Signal Bipolar Transistor, 4.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon,; ZXTN2010ASTZ
RM30CZ-24

RM30CZ-24

RM30CZ-24 Rectifier Diode, 1 Phase, 2 Element, 30A, 1200V V(RRM), Silicon,; RM30CZ-24
AUIRGSL30B60K

AUIRGSL30B60K

AUIRGSL30B60K Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN; AUIRGSL30B60K
IRG4PSC71KD

IRG4PSC71KD

IRG4PSC71KD Insulated Gate Bipolar Transistor, 85A I(C), 600V V(BR)CES, N-Channel, TO-274AA, LEAD FREE, SUPER-247, 3 PIN; IRG4PSC71KD
DTC363TKT146

DTC363TKT146

DTC363TKT146 Small Signal Bipolar Transistor, 0.6A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon,; DTC363TKT146
CPT30040D

CPT30040D

CPT30040D Rectifier Diode, Schottky, 1 Phase, 2 Element, 150A, 40V V(RRM), Silicon, PACKAGE-2; CPT30040D
2SC6017-E

2SC6017-E

2SC6017-E Bipolar Transistor, 50V, 10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA, DPAK / TP-FA, 500-BLKBG; 2SC6017-E
W0507YH450

W0507YH450

W0507YH450 DIODE 505 A, 4500 V, SILICON, RECTIFIER DIODE, Rectifier Diode; W0507YH450