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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

DIM1200FSS12-A

DIM1200FSS12-A

DIM1200FSS12-A Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, F, 12 PIN; DIM1200FSS12-A
MBRF2060CTG

MBRF2060CTG

MBRF2060CTG Schottky Power Rectifier, Switch-mode, 20 A, 60 V, TO-220 3 LEAD FULLPAK, 50-TUBE; MBRF2060CTG
VI-271-EU

VI-271-EU

VI-271-EU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, MODULE-9; VI-271-EU
APT2X21DC60J

APT2X21DC60J

APT2X21DC60J Rectifier Diode, Schottky, 1 Phase, 2 Element, 600V V(RRM), Silicon Carbide, ROHS COMPLIANT, ISOTOP-4; APT2X21DC60J
VI-BNX-EW

VI-BNX-EW

VI-BNX-EW DC-DC Booster Module, 100W; VI-BNX-EW
6DI20MS-050

6DI20MS-050

Power Bipolar Transistor, 20A I(C), 600V V(BR)CEO, 6-Element, NPN, Silicon, M615, 12 PIN
APTGF90SK60D1G

APTGF90SK60D1G

APTGF90SK60D1G Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, MODULE-7; APTGF90SK60D1G
DIM2400ESS12-A

DIM2400ESS12-A

DIM2400ESS12-A Insulated Gate Bipolar Transistor, 2400A I(C), 1200V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, E, 9 PIN; DIM2400ESS12-A
VUO52-16NO1

VUO52-16NO1

VUO52-16NO1 Bridge Rectifier Diode, 3 Phase, 54A, 1600V V(RRM), Silicon, ROHS COMPLIANT, MODULE-7; VUO52-16NO1
P2Z7ACB700W

P2Z7ACB700W

P2Z7ACB700W Silicon Controlled Rectifier, 395000mA I(T), 1200V V(RRM); P2Z7ACB700W