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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

SEMIX402GAL066HDS

SEMIX402GAL066HDS

SEMIX402GAL066HDS Insulated Gate Bipolar Transistor, 502A I(C), 600V V(BR)CES, N-Channel, CASE SEMIX 2S, 16 PIN; SEMIX402GAL066HDS
81CNQ040ASL

81CNQ040ASL

81CNQ040ASL Rectifier Diode, Schottky, 1 Phase, 2 Element, 40V V(RRM), Silicon, PLASTIC, D-61-8-SL, 3 PIN; 81CNQ040ASL
MMST4401T146

MMST4401T146

MMST4401T146 Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SMT3, SC-59, 3 PIN; MMST4401T146
VI-2WF-IW

VI-2WF-IW

VI-2WF-IW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-2WF-IW
VI-22X-CX

VI-22X-CX

VI-22X-CX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-22X-CX
BCV48TA

BCV48TA

BCV48TA Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon; BCV48TA
DIM2400NSM17-E

DIM2400NSM17-E

DIM2400NSM17-E Insulated Gate Bipolar Transistor, 2400A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, N, 7 PIN; DIM2400NSM17-E
ARF466FL

ARF466FL

ARF466FL RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC PACKAGE-6; ARF466FL
FMN-4306S

FMN-4306S

FMN-4306S Rectifier Diode,; FMN-4306S
VI-BNK-IV

VI-BNK-IV

VI-BNK-IV DC-DC Booster Module, 150W; VI-BNK-IV