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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

PD55025STR-E

PD55025STR-E

PD55025STR-E 25W 12.5V 500MHz LDMOS in powerSO-10RF plastic package; PD55025STR-E
KBPC50005W-G

KBPC50005W-G

KBPC50005W-G Bridge Rectifier Diode, 50A, 50V V(RRM),; KBPC50005W-G
TM25CZ-M

TM25CZ-M

TM25CZ-M Silicon Controlled Rectifier, 39.25A I(T)RMS, 25000mA I(T), 400V V(DRM), 400V V(RRM), 2 Element,; TM25CZ-M
BSM300GAR120DLC

BSM300GAR120DLC

BSM300GAR120DLC Insulated Gate Bipolar Transistor, 625A I(C), 1200V V(BR)CES, N-Channel, MODULE-5; BSM300GAR120DLC
BD242B-S

BD242B-S

BD242B-S Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3; BD242B-S
SW36CXC920

SW36CXC920

SW36CXC920 DIODE 2055 A, 3600 V, SILICON, RECTIFIER DIODE, Rectifier Diode; SW36CXC920
JANTXV2N2219A

JANTXV2N2219A

JANTXV2N2219A Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SIMILAR TO TO-39, 3 PIN; JANTXV2N2219A
S4S2RP

S4S2RP

S4S2RP Silicon Controlled Rectifier, 0.8A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, ROHS COMPLIANT, PLASTIC, COMPAK-2; S4S2RP
DRA9A14Y0L

DRA9A14Y0L

DRA9A14Y0L Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, SC-89, 3 PIN; DRA9A14Y0L
FDT86102LZ

FDT86102LZ

FDT86102LZ N-Channel PowerTrench® MOSFET 100V, 6.6A, 28mΩ, 4000-REEL; FDT86102LZ