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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

IXTH96P085T

IXTH96P085T

IXTH96P085T Power Field-Effect Transistor, 96A I(D), 85V, 0.013ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN; IXTH96P085T
VI-27W-EY

VI-27W-EY

VI-27W-EY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid, MODULE-9; VI-27W-EY
DMN1033UCB4-7

DMN1033UCB4-7

DMN1033UCB4-7 Power Field-Effect Transistor; DMN1033UCB4-7
APTGT150DA60T1G

APTGT150DA60T1G

APTGT150DA60T1G Insulated Gate Bipolar Transistor, 225A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP1, 12 PIN; APTGT150DA60T1G
MJE702G

MJE702G

MJE702G 4.0 A, 80 V PNP Darlington Bipolar Power Transistor, TO-225, 500-BLKBX; MJE702G
AZ23C24-TP

AZ23C24-TP

AZ23C24-TP Zener Diode, 24V V(Z), 5.78%, 0.3W, Silicon, Unidirectional, PLASTIC PACKAGE-3; AZ23C24-TP
MAC8SN

MAC8SN

MAC8SN Sensitive Gate Triac, TO-220 3 LEAD STANDARD, 50-TUBE; MAC8SN
VI-B5F-EU

VI-B5F-EU

VI-B5F-EU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-B5F-EU
IXSH30N60AU1

IXSH30N60AU1

IXSH30N60AU1 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN; IXSH30N60AU1
VI-21K-IU

VI-21K-IU

VI-21K-IU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, MODULE-9; VI-21K-IU