IXGH28N60B3D1 Insulated Gate Bipolar Transistor, 66A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN; IXGH28N60B3D1
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.