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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

IXSX50N60AU1

IXSX50N60AU1

IXSX50N60AU1 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, PLUS247, 3 PIN; IXSX50N60AU1
DIM800DDM17-A

DIM800DDM17-A

DIM800DDM17-A Insulated Gate Bipolar Transistor, 800A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, D, 10 PIN; DIM800DDM17-A
STPSC8H065CT

STPSC8H065CT

STPSC8H065CT 650 V, 8 A dual High Surge Silicon Carbide Power Schottky Diode; STPSC8H065CT
SI5517DU-T1-E3

SI5517DU-T1-E3

SI5517DU-T1-E3 Power Field-Effect Transistor, 6A I(D), 20V, 0.039ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, CHIPFET-8; SI5517DU-T1-E3
ZXT10N50DE6TC

ZXT10N50DE6TC

ZXT10N50DE6TC Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin, SUPERSOT-6; ZXT10N50DE6TC
ND350N14

ND350N14

ND350N14 Rectifier Diode, 1 Phase, 1 Element, 350A, 1400V V(RRM), Silicon, MODULE-2; ND350N14
DDB6U205N14

DDB6U205N14

DDB6U205N14 Bridge Rectifier Diode, 208A, 1400V V(RRM),; DDB6U205N14
IXXH50N60B3

IXXH50N60B3

IXXH50N60B3 Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN; IXXH50N60B3
UM2021

UM2021

UM2021 Analog Circuit, Hybrid, PDIP12; UM2021
BC337-25-AP

BC337-25-AP

BC337-25-AP Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3; BC337-25-AP