MUBW25-06A6K Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, MODULE-25; MUBW25-06A6K
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.