FME6G10US60 Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 17PM-BA, 17 PIN; FME6G10US60
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.