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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

IXGK320N60B3

IXGK320N60B3

IXGK320N60B3 Insulated Gate Bipolar Transistor, 320A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN; IXGK320N60B3
MUBW75-06A8

MUBW75-06A8

MUBW75-06A8 Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MODULE-24; MUBW75-06A8
L4X5

L4X5

L4X5 4 Quadrant Logic Level TRIAC, 400V V(DRM), 0.8A I(T)RMS, COMPAK-3; L4X5
PDMB600B12

PDMB600B12

PDMB600B12 Insulated Gate Bipolar Transistor; PDMB600B12
PAH200S48-12

PAH200S48-12

PAH200S48-12 DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid,; PAH200S48-12
DDC124EU-7

DDC124EU-7

DDC124EU-7 Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, PLASTIC PACKAGE-6; DDC124EU-7
C180P

C180P

C180P Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 1000; Max TMS Bridge Input Voltage: 150; Max DC Reverse Voltage: 20; Package: TO-93; C180P
IRLZ44PBF

IRLZ44PBF

IRLZ44PBF Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3; IRLZ44PBF
2SA1216

2SA1216

2SA1216 Power Bipolar Transistor, 17A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT-200, 3 PIN; 2SA1216
EC103D2RP

EC103D2RP

EC103D2RP Silicon Controlled Rectifier, 0.8A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3; EC103D2RP