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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

IRG7PH30K10PBF

IRG7PH30K10PBF

IRG7PH30K10PBF Insulated Gate Bipolar Transistor, 33A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3; IRG7PH30K10PBF
MDB6S

MDB6S

MDB6S 1A, 600V, MicroDIP, Single-Phase Bridge Rectifier, 4000-REEL; MDB6S
MBRH20040R

MBRH20040R

MBRH20040R 40V 200A Silicon Schottky Rectifier in D-67 (HALF PAK) Package; MBRH20040R
1DI200ZN-120

1DI200ZN-120

1DI200ZN-120 Power Bipolar Transistor, 200A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin; 1DI200ZN-120
94MT100K

94MT100K

94MT100K Silicon Controlled Rectifier, 141.3 A, 1000 V, SCR; 94MT100K
A70P800-4TI

A70P800-4TI

A70P800-4TI Electric Fuse, Very Fast Blow, 800A, 700VAC, 650VDC, 100000A (IR), Inline/holder,; A70P800-4TI
KSD526O

KSD526O

KSD526O Power Bipolar Transistor; KSD526O
MBR1030CT

MBR1030CT

MBR1030CT Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 30V V(RRM), Silicon, TO-220AB, GREEN, PLASTIC PACKAGE-3; MBR1030CT
T820109004DH

T820109004DH

T820109004DH Silicon Controlled Rectifier, 1410A I(T)RMS, 900000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, T82, 3 PIN; T820109004DH
T507027064AQ

T507027064AQ

T507027064AQ Silicon Controlled Rectifier, 110A I(T)RMS, 110000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-94, TO-94, 3 PIN; T507027064AQ