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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-J5N-IY

VI-J5N-IY

VI-J5N-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-J5N-IY
DRC9113Z0L

DRC9113Z0L

DRC9113Z0L Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, SC-89, 3 PIN; DRC9113Z0L
2SC4082T106P

2SC4082T106P

2SC4082T106P RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, SC-70, 3 PIN; 2SC4082T106P
S15VB80

S15VB80

S15VB80 Bridge Rectifier Diode, 15A, 800V V(RRM),; S15VB80
VS-26MT80

VS-26MT80

VS-26MT80 Bridge Rectifier Diode, 3 Phase, 25A, 800V V(RRM), Silicon, ROHS COMPLIANT, D-63, 5 PIN; VS-26MT80
BF421ZL1

BF421ZL1

BF421ZL1 Silicon Plastic Transistor, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD; BF421ZL1
PD110FG160

PD110FG160

PD110FG160 Silicon Controlled Rectifier, 110000mA I(T), 1600V V(RRM); PD110FG160
VI-B1Y-IU

VI-B1Y-IU

VI-B1Y-IU DC-DC Booster Module, 1 Output, 132W, Hybrid, PACKAGE-9; VI-B1Y-IU
EPC2007

EPC2007

EPC2007 Power Field-Effect Transistor, 6A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-5; EPC2007
HVL900-16IO1

HVL900-16IO1

HVL900-16IO1 Silicon Controlled Rectifier, 900A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 2 Element,; HVL900-16IO1