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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

V300A5C400A3

V300A5C400A3

V300A5C400A3 DC-DC Regulated Power Supply Module, 1 Output, 400W, Hybrid; V300A5C400A3
MCC26-12io8B

MCC26-12io8B

MCC26-12io8B Silicon Controlled Rectifier, 50A I(T)RMS, 27000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element, TO-240AA, TO-240AA, 5 PIN; MCC26-12io8B
VI-2WL-IY

VI-2WL-IY

VI-2WL-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-2WL-IY
2SB1143S

2SB1143S

2SB1143S Bipolar Transistor, (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single TO-126ML, TO 126ML, 200-BLKBG; 2SB1143S
MII300-12E4

MII300-12E4

MII300-12E4 Insulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel, MODULE-11; MII300-12E4
CTA06-1200CWPT

CTA06-1200CWPT

CTA06-1200CWPT Alternistor TRIAC, 1200V V(DRM), 6A I(T)RMS, TO-220AB, TO-220AB, 3 PIN; CTA06-1200CWPT
PM100RL1A060

PM100RL1A060

Source PM100RL1A060 Mitsubishi Electric IPM for commercial string inverters and microgrid storage. 600V, 100A ratings for fast dispatch.
T627022064DN

T627022064DN

T627022064DN Silicon Controlled Rectifier, 315A I(T)RMS, 315000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, CASE T62, 3 PIN; T627022064DN
VS-GBPC3502W

VS-GBPC3502W

VS-GBPC3502W Bridge Rectifier Diode, 1 Phase, 35A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBPCW, 4 PIN; VS-GBPC3502W
VI-B4Z-CW

VI-B4Z-CW

VI-B4Z-CW DC-DC Booster Module, 1 Output, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B4Z-CW