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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

STPS16045TV

STPS16045TV

STPS16045TV 45 V, 160 A dual Power Schottky Rectifier; STPS16045TV
2N3904RLRMG

2N3904RLRMG

2N3904RLRMG NPN Bipolar Transistor, TO-92 40 V, 0.2 A, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD; 2N3904RLRMG
S10VB60

S10VB60

S10VB60 Bridge Rectifier Diode, 1 Phase, 3.7A, 600V V(RRM), Silicon, S10VB, SQIP-4; S10VB60
APTGF20X60BTP2

APTGF20X60BTP2

APTGF20X60BTP2 Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, MODULE-24; APTGF20X60BTP2
SK50GARL065

SK50GARL065

SK50GARL065 Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, CASE T31, SEMITOP-10; SK50GARL065
CD631815C

CD631815C

CD631815C Silicon Controlled Rectifier; CD631815C
TM25DZ-M

TM25DZ-M

TM25DZ-M Silicon Controlled Rectifier, 39.25A I(T)RMS, 25000mA I(T), 400V V(DRM), 400V V(RRM), 2 Element,; TM25DZ-M
TM400CZ-2H

TM400CZ-2H

TM400CZ-2H Mitsubishi HIGH POWER GENERAL USE INSULATED TYPE 1600V 400A
MMBT4403-TP

MMBT4403-TP

MMBT4403-TP Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3; MMBT4403-TP
MAT14ARZ-RL

MAT14ARZ-RL

MAT14ARZ-RL Matched Monolithic Quad Transistor; MAT14ARZ-RL