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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

APTGF90DH60TG

APTGF90DH60TG

APTGF90DH60TG Insulated Gate Bipolar Transistor, 110A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP4, MODULE-14; APTGF90DH60TG
DIM1600FSS17-A

DIM1600FSS17-A

DIM1600FSS17-A Insulated Gate Bipolar Transistor, 1600A I(C), 1700V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, F, 7 PIN; DIM1600FSS17-A
MPK95-06DA

MPK95-06DA

MPK95-06DA Rectifier Diode, 1 Phase, 2 Element, 95A, 600V V(RRM), Silicon, TO-240AA, 0.039 INCH, TO-240AA, 5 PIN; MPK95-06DA
2N5457

2N5457

2N5457 Small Signal Field-Effect Transistor, 25V, 1-Element, N-Channel, Silicon, Junction FET, TO-92,; 2N5457
CE720802

CE720802

CE720802 Silicon Controlled Rectifier, 31.4A I(T)RMS, 20000mA I(T), 800V V(DRM), 800V V(RRM), 3 Element; CE720802
VI-B7R-EW

VI-B7R-EW

VI-B7R-EW DC-DC Booster Module, 1 Output, 100W, Hybrid, PACKAGE-9; VI-B7R-EW
ZC835ATC

ZC835ATC

ZC835ATC Variable Capacitance Diode, 68pF C(T), 25V, Silicon, Hyperabrupt, MINIATURE PACKAGE-3; ZC835ATC
3R3TI60E-080

3R3TI60E-080

3R3TI60E-080 Silicon Controlled Rectifier, 94.2A I(T)RMS, 60000mA I(T), 800V V(DRM), 800V V(RRM), 3 Element; 3R3TI60E-080
VS-180RKI80PBF

VS-180RKI80PBF

VS-180RKI80PBF Silicon Controlled Rectifier,; VS-180RKI80PBF
MD2103DFX

MD2103DFX

MD2103DFX 6A, 700V, NPN, Si, POWER TRANSISTOR, ROHS COMPLIANT, ISOWATT218FX, 3 PIN; MD2103DFX