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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

NJD35N04G

NJD35N04G

NJD35N04G 4.0 A, 350 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE; NJD35N04G
MRF6S9045NBR1

MRF6S9045NBR1

MRF6S9045NBR1 RF Power Field-Effect Transistor; MRF6S9045NBR1
FMMTA56TC

FMMTA56TC

FMMTA56TC Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN; FMMTA56TC
W0438SD16

W0438SD16

W0438SD16 Rectifier Diode, 1 Phase, 1 Element, 320A, 1600V V(RRM), Silicon,; W0438SD16
VI-B5N-CW

VI-B5N-CW

VI-B5N-CW DC-DC Booster Module, 100W; VI-B5N-CW
VI-2T3-EU

VI-2T3-EU

VI-2T3-EU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid,; VI-2T3-EU
PB610-BP

PB610-BP

PB610-BP Bridge Rectifier Diode, 1 Phase, 6A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, PB-6, 4 PIN; PB610-BP
VI-271-CX

VI-271-CX

VI-271-CX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-271-CX
PKF2113ASI

PKF2113ASI

PKF2113ASI DC-DC Regulated Power Supply Module, 1 Output, 12W, Hybrid, 8 MM HEIGHT, POWER, MODULE, SMD-18; PKF2113ASI
PDMB300B12C

PDMB300B12C

PDMB300B12C Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; PDMB300B12C