IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

DDTA123TCA-7

DDTA123TCA-7

DDTA123TCA-7 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3; DDTA123TCA-7
1DI75E-100

1DI75E-100

1DI75E-100 Power Bipolar Transistor, 75A I(C), 1000V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin, M206, 7 PIN; 1DI75E-100
EVF33T-040

EVF33T-040

EVF33T-040 Power Bipolar Transistor, 15A I(C), 1-Element,; EVF33T-040
SKT290F04DS

SKT290F04DS

SKT290F04DS Silicon Controlled Rectifier, 600A I(T)RMS, 290000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB; SKT290F04DS
KBU3510-G

KBU3510-G

KBU3510-G Bridge Rectifier Diode, 35A, 1000V V(RRM),; KBU3510-G
2DI30A-120

2DI30A-120

2DI30A-120 FUJI Power Bipolar Transistor, 30A 1200V 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin
MMIX1G120N120A3V1

MMIX1G120N120A3V1

MMIX1G120N120A3V1 Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel,; MMIX1G120N120A3V1
VI-J0X-CZ

VI-J0X-CZ

VI-J0X-CZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J0X-CZ
IXGF25N250

IXGF25N250

IXGF25N250 Insulated Gate Bipolar Transistor, 30A I(C), 2500V V(BR)CES, N-Channel, PLASTIC, ISOPLUS, I4PAC-3; IXGF25N250
2SA2169-TL-E

2SA2169-TL-E

2SA2169-TL-E Bipolar Transistor, -50V, -10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA, DPAK / TP-FA, 700-REEL; 2SA2169-TL-E