APT20M11JVR Power Field-Effect Transistor, 175A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4; APT20M11JVR
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.